Request for Quote

IC Interconnect offers a wide range of services to meet customer needs. In order that ICI might provide the most comprehensive response please fill out this RFQ with as much information as possible. ICI's engineering staff will assess your requirements and evaluate them against our technology offerings in terms of process parameters and design rules. The sales staff will then be in a position to provide a budgetary quote for you to work with. In the event that this level of detail is premature, please feel free to contact us by phone or e-mail to discuss your application.

1) Fill out the form below, click on the "Submit" button at the bottom of the form and it will be forwarded to IC Interconnect.

2) Complete the form below, print, and fax to 719-533-1021.

3) Click one of the PDF icons, fill out, and fax to 719-533-1021:
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Contact Name:
Company Name:
Company Address:
Phone:
Fax:
Email:
Device Name:
Services Requested: 1. Ni/Au UBM + Solder Bumping (Flip Chip) [Please fill out sections A through D] 2. Ni/Au UBM + Ball Placement (WLCSP) [Please fill out sections A through D] 3. Ni/Au as a wire bond surface [Please fill out sections A through C] 4. Ni/Au as a hard mini bump [Please fill out sections A through C] 5. Solder Deposition on your UBM [Please fill out sections A, B, and D] 6. Reliability Modeling [Submit, you will be contacted with details] 7. Laser Mark [Please fill out sections A, B, and E] 8. Flip Chip Assembly [Submit, you will be contacted with details]
A. Program Information
Application Description
Files Available (select all that apply)    GDSII    Wafer Map    Specifications
Program Status    In production     Wafer Volume:   wafers/week    Design in qualification     Wafer Volume Forecast:   wafers/week    Die Design complete and taped out    Die function defined not yet taped out    R&D
Timing    Immediate    Within the next three to six months    Within the next six months to a year
B. General Wafer Information
Wafer Type    Silicon    GaAs    Glass    Ceramic    Lithium based    SiGe    Quartz    Other:
Wafer Dimensions    Thickness: µm    Diameter:  mm
Final Grind Condition    Full thickness    Mechanical grind    Chem or Plasma
Passivation Type    Silicon Nitride    Silicon Oxide    Silicon OxyNitride    Polyimide    BCB    Other:
Passivation    Thickness: µm
Backside Condition    Oxide    Si    Polymer    Ag    Au    Other:
C. Ni/Au Plating Related Information
Metal Composition    Aluminum            %Al             %Si            % Cu    Copper (100%)    Other
Pad Metal Thickness    t= µm          ± µm
Passivation Opening Size and Shape    Round        dia= µm    Rectangular  x= µm           y= µm    Other
Open Metal (other than pads to be bumped)   in the Streets   yes   no   in the Die        yes   no   open Fuses      yes   no
Wafer contains Ink Dots yes   no
Desired Ni Thickness    t= µm
Minimum Spacing between open Metal (edge to edge)    µm
D. Solder Related Information
Bond Pad Layout    Full Area Array    Peripheral (1 row)    Peripheral (2 rows)    Other:
Solder Alloy    63Sn/37Pb    90Pb/10Sn    95.5Sn/3.8Ag/0.7Cu    Other:
Minimum Pitch within a Die (centerline to centerline) Minimum Pitch Die to Die (centerline to centerline) Distance from Pad edge to Die edge			µm µm µm
Die Stepping Distance   x= µm           y= µm
Saw Street Width   µm
Solderable Metal Size and Shape    Round        dia= µm    Rectangular  x= µm           y= µm    Other
Desired Solder Bump Height   µm
E. Laser Mark Related Information
Mark Color    Light    Dark
Number of Die per wafer
Die Size   x= µm            y= µm
Number of Characters per Die
IC Interconnect Confidential/Proprietary Rev. 02

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